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| BCV26, BCV46 PNP Darlington Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Version 2004-01-20 Power dissipation - Verlustleistung 2.9 0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehause 1.3 0.1 Type Code 1 2 2.5 max Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Mae in mm 1 = B1 2 = E2 3 = C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Base current - Basisstrom (dc) Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur VBE = 0 E open C open - VCES - VCB0 - VEB0 Ptot - IC - ICM - IB Tj TS Grenzwerte (TA = 25/C) BCV26 30 V 40 V 10 V 250 mW 1) 500 mA 800 mA 100 mA 150/C - 65...+ 150/C BCV46 60 V 80 V Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, - VCB = 30 V IE = 0, - VCB = 60 V IC = 0, - VEB = 10 V - IC = 100 mA, - IB = 0.1 mA BCV26 BCV46 - ICB0 - ICB0 - IEB0 - VCEsat - - - - Kennwerte (Tj = 25/C) Typ. - - - - Max. 100 nA 100 nA 100 nA 1V Emitter-Base cutoff current - Emitterreststrom Collector saturation volt. - Kollektor-Sattigungsspg. 2) ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 1 6 Darlington Transistors BCV26, BCV46 Characteristics (Tj = 25/C) Min. Base saturation voltage - Basis-Sattigungsspannung ) - IC = 100 mA, - IB = 0.1 mA BCV26 BCV46 BCV26 BCV46 BCV26 BCV46 VBEsat hFE hFE hFE hFE hFE hFE - VBEon fT - 4000 2000 10000 4000 20000 10000 - - RthA 1 Kennwerte (Tj = 25/C) Typ. - - - - - - - - 220 MHz Max. 1.5 V - - - - - - 1.4 V - 420 K/W 2) BCV27, BCV47 DC current gain - Kollektor-Basis-Stromverhaltnis 1) - VCE = 5 V, - IC = 1 mA - VCE = 5 V, - IC = 10 mA - VCE = 5 V, - IC = 100 mA Base-Emitter voltage - Basis-Emitter-Spannung 1) - VCE = 5 V, - IC = 10 mA Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Marking - Stempelung Pinning - Anschlubelegung BCV26 = FD 3 BCV46 = FE 3 T1 T2 1 2 1 2 1 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 7 |
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